4n25(g)v/ 4n35(g)v series vishay semiconductors rev. a4, 11jan99 1 (10) optocoupler with phototransistor output description the 4n25(g)v/ 4n35(g)v series consists of a photo- transistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. the elements are mounted on one leadframe using a coplanar technique , providing a fixed distance between input and output for highest safety requirements. applications circuits for safe protective separation against electrical shock according to safety class ii (reinforced isolation): for appl. class i iv at mains voltage 300 v for appl. class i iii at mains voltage 600 v according to vde 0884, table 2, suitable for: switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. vde standards these couplers perform safety functions according to the following equipment standards: vde 0884 optocoupler for electrical safety requirements iec 950/en 60950 office machines (applied for reinforced isolation for mains voltage 400 v rms ) vde 0804 telecommunication apparatus and data processing iec 65 safety for mains-operated electronic and related household apparatus 14827 65 4 2 3 1 c e a (+) c () n.c. 95 10805 b order instruction ordering code ctr ranking remarks 4n25v/ 4N25GV 1) >20% 4n35v/ 4n35gv 1) >100% 1) g = leadform 10.16 mm; g is not marked on the body
4n25(g)v/ 4n35(g)v series vishay semiconductors rev. a4, 11jan99 2 (10) features approvals: bsi : bs en 41003, bs en 60095 (bs 415), bs en 60950 (bs 7002), certificate number 7081 and 7402 fimko (seti): en 60950, certificate number 12399 u nderwriters l aboratory (ul) 1577 recognized, file number e-76222 vde 0884, certificate number 94778 vde 0884 related features: rated impulse voltage (transient overvoltage) v iotm = 6 kv peak isolation test voltage (partial discharge test voltage) v pd = 1.6 kv rated isolation voltage (rms includes dc) v iowm = 600 v rms (848 v peak) rated recurring peak voltage (repetitive) v iorm = 600 v rms creepage current resistance according to vde 0303/iec 112 c omparative t racking i ndex: cti = 275 thickness through insulation ? ? ??????? ??????? ????????? ???????? ????????? ?? ???? ??????? ?????? ? ??????? ?? ??? ? ???? ??? MM? ??????? ?????????????? ??? ???? M ??? ?? ?????? ??????????? ????????? ???? ??? ?????? ?????? ?? ????? ? ? ???? ? ???? ? ??? ???????? ??? ????????? ??????????? ?? ?? ?????? ???? ? ?????? ???? ?????? ???? ???????? ??????? ???? ?????????? ???? ???? ???? ?????? ??????? ? ? ??????? ?????? ? ? M ? ??????? ???? ?????? ? ? s i fsm 3 a power dissipation t amb ? ? ? ? ? ??????? ????????? ? ? ?? ? ??? ?????????? ??????? ???? ?????????? ???? ???? ???? ????????? ?????? ??????? ? ?? ? ? ?????? ????????? ??????? ? ?? ? ? ????????? ?????? ? ? ? ? ????????? ??? ?????? ? ? ? ? ? ? ? ?? ? ? ???? ?????????? ? ?? ? ? ? ?? ? ??????? ????????? ? ? ?? ? ????? ??????? ???? ?????????? ???? ???? ???? ????????? ???? ??????? ???? ? ? ?? ? ? ?? ?? ????? ???? ?????????? ? ?? ? ? ??? ?? ? ?????? ????????? ????? ? ?? ?? ? ? ??????? ????????? ????? ? ??? ?? ?? ? ????????? ????????? ? ? ??? ???? ? ? ? ? ?? ?M ?
4n25(g)v/ 4n35(g)v series vishay semiconductors rev. a4, 11jan99 3 (10) electrical characteristics (t amb = 25 ?? ???? ???????? ??????? ???? ?????????? ???? ??? ?? ?? ???? ??????? ??????? ? ? ? ? ? ?? ? ? ? ? ?? ?? ? ??????? ?????????? ? ? ? ??? ? ? ? ? ??? ?????????? ??????? ???? ?????????? ???? ??? ?? ?? ???? ????????? ?????? ??????? ? ? ? ? ? ?? ? ? ?????? ????????? ??????? ? ? ? ? ? ?? ? ? ????????? ?????? ????? ?????? ? ?? ? ? ? ? ? ?? ? ? ? ?? ? ?? ? ?? ? ? ? ? ? ?? ? ? ? ?? ? ? ????? ??????? ???? ?????????? ???? ??? ?? ?? ???? ????????? ?????? ????????? ??????? ? ? ? ? ? ? ? ? ? ????? ? ? ????? ??????? ? ?? ? ? ? ? ? ? ? f c 110 khz coupling capacitance f = 1 mhz c k 1 pf current transfer ratio (ctr) parameter test conditions type symbol min. typ. max. unit i c /i f v ce = 10 v, i f = 10 ma 4n25(g)v ctr 0.20 1 c f ce f 4n35(g)v ctr 1.00 1.5 v ce = 10 v, i f = 10 ma, t amb = 100 ? ?????? ?? ??
4n25(g)v/ 4n35(g)v series vishay semiconductors rev. a4, 11jan99 4 (10) maximum safety ratings (according to vde 0884) see figure 1 this device is used for protective separation against electrical shock only within the maximum safety ratings. this must be ensured by using protective circuits in the applications. input (emitter) parameters test conditions symbol value unit forward current i si 130 ma output (detector) parameters test conditions symbol value unit power dissipation t amb 3 25 5 c p si 265 mw coupler parameters test conditions symbol value unit rated impulse voltage v iotm 6 kv safety temperature t si 150 insulation rated parameters (according to vde 0884) parameter test conditions symbol min. typ. max. unit partial discharge test voltage routine test 100%, t test = 1 s v pd 1.6 kv partial discharge test voltage t tr = 60 s, t test = 10 s, v iotm 6 kv gg lot test (sample test) tr test (see figure 2) v pd 1.3 kv insulation resistance v io = 500 v r io 10 12 v io = 500 v, t amb = 100 5 c r io 10 11 v io = 500 v, t amb = 150 5 c (construction test only) r io 10 9 0 25 50 75 125 0 50 100 150 200 300 p total power dissipation ( mw ) tot t si safety temperature ( 5 c ) 150 94 9182 100 250 phototransistor psi ( mw ) ir-diode isi ( ma ) figure 1. derating diagram v iotm v pd v iowm v iorm v t 4 t 3 t test t stres t 2 t 1 t 0 13930 t tr = 60 s t 1 , t 2 = 1 to 10 s t 3 , t 4 = 1 s t test = 10 s t stres = 12 s figure 2. test pulse diagram for sample test according to din vde 0884
4n25(g)v/ 4n35(g)v series vishay semiconductors rev. a4, 11jan99 5 (10) switching characteristics of 4n25(g)v parameter test conditions symbol typ. unit delay time v s = 5 v, i c = 5 ma, r l = 100 (see figure 3) t d 4.0 s rise time s c l (g) t r 7.0 s fall time t f 6.7 s storage time t s 0.3 s turn-on time t on 11.0 s turn-off time t off 7.0 s turn-on time v s = 5 v, i f = 10 ma, r l = 1 k (see figure 4) t on 25.0 s turn-off time s f l (g) t off 42.5 s switching characteristics of 4n35(g)v parameter test conditions symbol typ. unit delay time v s = 5 v, i c = 2 ma, r l = 100 (see figure 3) t d 2.5 s rise time s c l (g) t r 3.0 s fall time t f 4.2 s storage time t s 0.3 s turn-on time t on <10.0 s turn-off time t off <10.0 s turn-on time v s = 5 v, i f = 10 ma, r l = 1 k (see figure 4) t on 9.0 s turn-off time s f l (g) t off 25.0 s channel i channel ii 100 50 + 5 v oscilloscope r l 1 m c l 20 pf i c = 5 ma/ 2 ma; adjusted through input amplitude i f 0 14950 i f r g = 50 t p = 50 s t p t 0.01 figure 3. test circuit, non-saturated operation channel i channel ii 1 k 50 + 5 v oscilloscope i c i f = 10 ma i f 0 95 10844 r l 1 m c l 20 pf r g = 50 t p = 50 s t p t 0.01 figure 4. test circuit, saturated operation t p t t 0 0 10% 90% 100% t r t d t on t s t f t off i f i c 96 11698 t p pulse duration t d delay time t r rise time t on (= t d + t r ) turn-on time t s storage time t f fall time t off (= t s + t f ) turn-off time figure 5. switching times
4n25(g)v/ 4n35(g)v series vishay semiconductors rev. a4, 11jan99 6 (10) typical characteristics (t amb = 25 c, unless otherwise specified) 0 50 100 150 200 250 300 0 40 80 120 p total power dissipation ( mw ) t amb ambient temperature ( 5 c ) 96 11700 tot coupled device phototransistor ir-diode figure 6. total power dissipation vs. ambient temperature 0.1 1.0 10.0 100.0 1000.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v f forward voltage ( v ) 96 11862 f i forward current ( ma ) figure 7. forward current vs. forward voltage 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 30 20 10 0 10 20 30 40 50 60 70 80 t amb ambient temperature ( 5 c ) 96 11874 ctr relative current transfer ratio rel v ce =10v i f =10ma figure 8. relative current transfer ratio vs. ambient temperature 1 10 100 1000 10000 0 102030405060708090100 t amb ambient temperature ( 5 c ) 96 11875 i collector dark current, ceo with open base ( na ) v ce =10v i f =0 figure 9. collector dark current vs. ambient temperature 0.001 0.010 0.100 1.000 1 10 100 i f forward current ( ma ) 96 11876 i collector base current ( ma ) cb v cb =10v figure 10. collector base current vs. forward current 0.01 0.10 1.00 10.00 100.00 0.1 1.0 10.0 100.0 i f forward current ( ma ) 96 11904 v ce =10v i collector current ( ma ) c figure 11. collector current vs. forward current
4n25(g)v/ 4n35(g)v series vishay semiconductors rev. a4, 11jan99 7 (10) 0.1 1.0 10.0 100.0 0.1 1.0 10.0 100.0 v ce collector emitter voltage ( v ) 96 11905 i collector current ( ma ) c 20ma 10ma 5ma 2ma 1ma i f =50ma figure 12. collector current vs. collector emitter voltage 110 0 0.2 0.4 0.6 0.8 1.0 v collector emitter saturation voltage ( v ) cesat i c collector current ( ma ) 100 95 10972 ctr=50% 20% 10% figure 13. collector emitter saturation voltage vs. collector current 0.01 0.1 1 10 0 200 400 600 800 1000 h dc current gain fe i c collector current ( ma ) 100 95 10973 v ce =10v 5v figure 14. dc current gain vs. collector current 0.1 1 10 1 10 100 1000 ctr current transfer ratio ( % ) i f forward current ( ma ) 100 95 10976 v ce =20v figure 15. current transfer ratio vs. forward current 0 5 10 15 0 10 20 30 40 50 i f forward current ( ma ) 20 95 10974 t / t turn on / turn off time ( s ) off on saturated operation v s =5v r l =1k t off t on figure 16. turn on / off time vs. forward current 02 4 6 i c collector current ( ma ) 10 95 10975 t / t turn on / turn off time ( s ) off on non saturated operation v s =10v r l =100 t off t on 0 5 10 15 20 8 figure 17. turn on / off time vs. collector current
4n25(g)v/ 4n35(g)v series vishay semiconductors rev. a4, 11jan99 8 (10) xxxxxx 0884 918 a tk 63 15090 type date code (ym) coupling system indicator company logo production location safety logo v de figure 18. marking example dimensions of 4n25g/ 4n35g in mm 14771 weight: ca. 0.50 g creepage distance: 8 mm air path: 8 mm after mounting on pc board
4n25(g)v/ 4n35(g)v series vishay semiconductors rev. a4, 11jan99 9 (10) dimensions of 4n25/ 4n35 in mm 14770 weight: 0.50 g creepage distance: 6 mm air path: 6 mm after mounting on pc board
4n25(g)v/ 4n35(g)v series vishay semiconductors rev. a4, 11jan99 10 (10) ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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